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| HITFET (R) BTS 3142 D Smart Lowside Power Switch Features *Logic Level Input *Input Protection (ESD) *Thermal shutdown *Overload protection *Short circuit protection *Overvoltage protection *Current limitation *Analog driving possible Product Summary Drain source voltage On-state resistance Nominal load current Clamping energy VDS R DS(on) ID(Nom) EAS 42 28 4.6 3.5 V m A J Application *All kinds of resistive, inductive and capacitive loads in switching or linear applications *C compatible power switch for 12 V DC applications *Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET in Smart SIPMOS (R) technology. Fully protected by embedded protection functions. Vbb M HITFET (R) Current Limitation In Pin 1 Drain Pin 2 and 4 (TAB) OvervoltageProtection Gate-Driving Unit ESD Overload Protection Overtemperature Protection Short circuit Protection Pin 3 Source Page 1 2002-09-04 BTS 3142 D Maximum Ratings at T j = 25C, unless otherwise specified Parameter Drain source voltage Drain source voltage for short circuit protection Tj = -40...150C Continuous input current -0.2V VIN 10V VIN < -0.2V or VIN > 10V Operating temperature Storage temperature Power dissipation TC = 85 C 6cm2 cooling area , TA = 85 C Unclamped single pulse inductive energy 1) Load dump protection VLoadDump2) = VA + VS VIN = 0 and 10 V, td = 400 ms, RI = 2 , RL = 3 , VA = 13.5 V Electrostatic discharge voltage (Human Body Model) according to MIL STD 883D, method 3015.7 and EOS/ESD assn. standard S5.1 - 1993 DIN humidity category, DIN 40 040 IEC climatic category; DIN IEC 68-1 Thermal resistance junction - case: SMD: junction - ambient @ min. footprint @ 6 cm2 cooling area 3) RthJC RthJA 115 55 1.1 K/W E 40/150/56 VESD 2 kV EAS VLD Tj Tstg Ptot 59 1.1 3.5 67.5 J V IIN no limit | IIN | 2 -40 ...+150 -55 ... +150 W C mA Symbol VDS VDS(SC) Value 42 28 Unit V 1 Not tested, specified by design. 2V Loaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 3 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70m thick) copper area for drain connection. PCB mounted vertical without blown air. Page 2 2002-09-04 BTS 3142 D Electrical Characteristics Parameter at Tj = 25C, unless otherwise specified Characteristics Drain source clamp voltage Tj = - 40 ...+ 150, I D = 10 mA Off-state drain current Tj = -40 ... +150C VDS = 32 V, VIN = 0 V Input threshold voltage ID = 1.2 mA, Tj = 25 C ID = 1.2 mA, Tj = 150 C On state input current On-state resistance VIN = 5 V, ID = 4.6 A, T j = 25 C VIN = 5 V, ID = 4.6 A, T j = 150 C On-state resistance VIN = 10 V, I D = 4.6 A, Tj = 25 C VIN = 10 V, I D = 4.6 A, Tj = 150 C Nominal load current Tj < 150C, VIN = 10 V, TA = 85 C, SMD 1) Nominal load current VIN = 10 V, VDS = 0.5 V, TC = 85 C, Tj < 150C Current limit (active if VDS>2.5 V)2) VIN = 10 V, VDS = 12 V, tm = 200 s ID(lim) 30 45 55 ID(ISO) ID(Nom) 4.6 12.6 RDS(on) 23 46 28 56 A IIN(on) RDS(on) 27 54 34 68 VIN(th) 1.3 0.8 1.7 10 2.2 30 A m V IDSS 1.5 20 A VDS(AZ) 42 55 V Symbol min. Values typ. max. Unit 1@ 6 cm2 cooling area 2Device switched on into existing short circuit (see diagram Determination of I D(lim)). If the device is in on condition and a short circuit occurs, these values might be exceeded for max. 50 s. Page 3 2002-09-04 BTS 3142 D Electrical Characteristics Parameter at Tj = 25C, unless otherwise specified Symbol min. Values typ. max. Unit Dynamic Characteristics Turn-on time Turn-off time Slew rate on Slew rate off VIN to 90% I D: VIN to 10% I D: 70 to 50% Vbb: 50 to 70% Vbb: ton toff -dV DS/dton dV DS/dtoff 60 60 0.3 0.3 120 120 1.5 1.5 s RL = 4.7 , VIN = 0 to 10 V, Vbb = 12 V RL = 4.7 , VIN = 10 to 0 V, Vbb = 12 V V/s RL = 4.7 , VIN = 0 to 10 V, Vbb = 12 V RL = 4.7 , VIN = 10 to 0 V, Vbb = 12 V Protection Functions1) Thermal overload trip temperature Input current protection mode Input current protection mode Tj = 150 C Unclamped single pulse inductive energy 2) ID = 4.6 A, T j = 25 C, Vbb = 12 V EAS 3.5 J T jt IIN(Prot) IIN(Prot) 150 175 220 180 400 400 C A Inverse Diode Inverse diode forward voltage IF = 51 A, t m = 250 s, V IN = 0 V, tP = 300 s VSD 1.0 V 1Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. 2 Not tested, specified by design. Page 4 2002-09-04 BTS 3142 D Block diagram Terms Inductive and overvoltage output clamp RL V I IN 1 IN HITFET S VIN 3 2 D ID VDS Vbb Z D S HITFET Input circuit (ESD protection) V Gate Drive Input Short circuit behaviour IN I IN t Source/ Ground I D t T t j t Page 5 2002-09-04 BTS 3142 D 1 Maximum allowable power dissipation Ptot = f(T C) resp. Ptot = f(T A) @ R thJA=55 K/W 5 W 2 On-state resistance RON = f(T j); ID=12.6A; V IN=10V 60 max. m 4 3.5 Rthjc = 1.1 K/W R DS(on) Ptot 40 typ. 3 2.5 2 SMD @ 6cm2 30 1.5 1 20 10 0.5 0 -50 0 -50 -25 0 25 50 75 100 C 150 -25 0 25 50 75 100 125 C 175 TA;TC Tj 3 On-state resistance RON = f(T j); ID= 12.6A; V IN=5V 80 4 Typ. input threshold voltage VIN(th) = f(T j); I D = 1.2 mA; V DS = 12V 2 V m max. 1.6 R DS(on) VGS(th) 60 1.4 1.2 1 0.8 0.6 50 typ. 40 30 20 0.4 10 0.2 0 -50 0 -50 -25 0 25 50 75 100 125 C 175 -25 0 25 50 75 100 C 150 Tj Page 6 Tj 2002-09-04 BTS 3142 D 5 Typ. transfer characteristics ID=f(V IN); V DS=12V; TJstart =25C 50 A 6 Typ. short circuit current ID(lim) = f(Tj); VDS=12V Parameter: V IN 60 A 40 35 50 45 40 ID 30 25 20 15 ID 35 30 25 20 15 Vin=10V 5V 10 10 5 0 1 2 3 4 5 6 7 8 5 V 10 0 -50 -25 0 25 50 75 100 125 C 175 VIN Tj 7 Typ. output characteristics ID=f(V DS); TJstart=25C Parameter: V IN 60 A 8 Typ. off-state drain current I DSS = f(T j) 25 A 10V 50 45 40 20 7V 6V max. ID 5V I DSS 17.5 15 12.5 10 7.5 35 30 25 20 15 Vin=3V 4V 10 5 0 0 1 2 3 4 V 5 typ. 2.5 0 -50 6 -25 0 25 50 75 100 125 C 175 VDS Page 7 Tj 2002-09-04 BTS 3142 D 9 Typ. overload current I D(lim) = f(t), Vbb=12 V, no heatsink Parameter: Tjstart 70 10 Typ. transient thermal impedance Z thJA=f(t p) @ 6 cm2 cooling area Parameter: D=tp/T 10 K/W 2 A -40C D=0.5 10 1 0.2 0.1 I D(lim) 50 Z thJA 25C 0.05 40 85C 10 0 0.02 0.01 30 10 150C -1 20 10 10 -2 Single pulse 0 0 0.5 1 1.5 2 2.5 3 3.5 4 10 -3 ms t 5 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 s 10 3 tp 11 Determination of ID(lim) I D(lim) = f(t); tm = 200s Parameter: TJstart 70 A -40C I D(lim) 50 25C 40 85C 30 150C 20 10 0 0 0.1 0.2 0.3 0.4 ms 0.6 t Page 8 2002-09-04 BTS 3142 D Package P-TO252-3-1 Ordering Code Q67060-S6087-A101 Page 9 2002-09-04 BTS 3142 D Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 10 2002-09-04 |
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